Mist-CVD-derived Hf0.55Zr0.45O2 ferroelectric thin films post-annealed by rapid thermal annealing

Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process

Ti/Si thin films during ultra rapid thermal annealing

WC introduce a new technique for rapidly heating (10’ “C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from lo3 to lo6 “C/s. The temperature of ...

Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

Effect of grain size on thermal transport in post-annealed antimony telluride thin films

The effects of grain size and strain on the temperature-dependent thermal transport of antimony telluride (Sb2Te3) thin films, controlled using post-annealing temperatures of 200°C to 350°C, were investigated using the 3-omega method. The measured total thermal conductivities of 400-nm-thick thin films annealed at temperatures of 200°C, 250°C, 300°C, 320°C, and 350°C were determined to be 2.0 t...